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Stress and Adhesion of CVD Copper and TiN

Published online by Cambridge University Press:  21 February 2011

Tue Nguyen  and
David R Evans
Tue Nguyen
Affiliation:
5700 NW Pacific Rim Blvd. Camas, WA 98607
David R Evans
Affiliation:
5700 NW Pacific Rim Blvd. Camas, WA 98607
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Abstract

The use of copper for interconnect metallization on advanced submicron integrated circuits is attractive because of its inherent low resistivity. To date, chemical vapor deposition (CVD) processes which produce copper films with nearly bulk resistivity and good uniformity have been produced. However, adhesion of the copper deposit to underlying barrier materials, in particular to titanium nitride (TiN), has been problematic. In this work, adhesion has been measured using both a qualitative and a semi-quantitative method and has been correlated with process conditions and precursor formulation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 859
Copyright
Copyright © Materials Research Society 1995

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References

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