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Strain-Induced Effects on the Resonant Tunnelling of Holes in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Heterostructures

Published online by Cambridge University Press:  01 February 2011

C. Meguenni ,
K. Zitouni ,
N. Mokdad  and
A. Kadri
C. Meguenni
Affiliation:
Laboratoire d'Etude des Matériaux, Optoélectronique & Polymères (L.E.M.O.P.) Department of Physics, University of Oran (Es-Senia), Oran 31100, Algeria
K. Zitouni
Affiliation:
Laboratoire d'Etude des Matériaux, Optoélectronique & Polymères (L.E.M.O.P.) Department of Physics, University of Oran (Es-Senia), Oran 31100, Algeria
N. Mokdad
Affiliation:
Laboratoire d'Etude des Matériaux, Optoélectronique & Polymères (L.E.M.O.P.) Department of Physics, University of Oran (Es-Senia), Oran 31100, Algeria
A. Kadri
Affiliation:
Laboratoire d'Etude des Matériaux, Optoélectronique & Polymères (L.E.M.O.P.) Department of Physics, University of Oran (Es-Senia), Oran 31100, Algeria
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Abstract

We present a multi-band effective mass kP study of built-in strain induced effects on the resonant tunnelling of holes in Zinc-Blende AlyGa1-yN/AlxGa1-xN/AlyGa1-yN Double Barrier Resonant Tunnelling Heterostructures with 0 ≤ × ≤ 0.15 and 0.2 ≤ y ≤ 0.3. We show the influence of the SH split-off band on the resonant tunnelling of light (LH) and heavy (HH) holes through the strain-induced mixing of valence subband states. This valence subbands coupling is shown to result in a broadening of the resonance peaks in SL, LS hole transmission curves and a smearing out of the corresponding resonance peaks in the tunnel current. This effect is shown to decrease with increasing biaxial compression (decreasing x) and is minimum at x=0 in an Al.20Ga.80N/GaN/Al.20Ga.80N heterostructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E3.13
Copyright
Copyright © Materials Research Society 2005

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References

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