Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-19T02:46:51.242Z Has data issue: false hasContentIssue false
  • English
  • Français

Strain-Free GexSi1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

Published online by Cambridge University Press:  22 February 2011

E. A. Fitzgerald ,
Y. H. Xie ,
M. L. Green ,
D. Brasen ,
A. R. Kortan ,
Y. J. Mii ,
J. Michel ,
B. E. Weir ,
L. C. Feldman  and
J. M. Kuo
E. A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Y. H. Xie
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
M. L. Green
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
D. Brasen
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
A. R. Kortan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Y. J. Mii
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J. Michel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J. M. Kuo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Get access

Abstract

We have grown linearly compositionally graded GexSi1−x structures at high temperatures (700–900°C) on Si substrates to form a surface which resembles a GexSi1−x substrate. We have obtained completely relaxed structures with x≤0.50 and threading dislocation densities in the 105cm−2 - 106cm−2 range. Because of the very low threading dislocation densities, the structures appear dislocation free in conventional transmission electron microscopy (TEM) cross-section and plan view. Employing the electron beam induced current technique (EBIC), we were able to consistently measure these low threading dislocation densities. A direct comparison of two x=0.35 films, one graded in Ge content and one uniform in Ge content, shows that compositional grading decreases the dislocation density by a factor of 100–1000. These. higher quality graded buffers have been used as templates for the subsequent growth of InGaP light emitting diodes (LED) and GexSi1−x/Si two-dimensional electron gas (2DEG) structures. Room temperature operation of orange-red LEDs were obtained at current densities of =600A/cm, and mobilities as high as 96,000 cm2/V-s were achieved at 4.2K in the 2DEG structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 211
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Rosenberg, J. J., Benlarmi, M., Kirchner, P.D., Woodall, J. M., and Pettit, G. D., IEEE Elect. Dev. Lett. EDL- 6, 491 (1985).CrossRefGoogle Scholar
[2] Enquist, P. M., Ramberg, L. P., Najjar, P. E., Schaff, W. J., Kavanagh, K. L., Wicks, G. W., and Eastman, L. F., J. Cryst. Growth 81, 378 (1987).Google Scholar
[3] Iyer, S. S., Patton, G. L., Stork, J. M. C., Meyerson, B. S., and Harame, D. L., IEEE Trans. Elect. Dev. 36, 2043 (1989).CrossRefGoogle Scholar
[4] van der Merwe, J. H., J. Appl. Phys. 34, 117 (1963).Google Scholar
[5] Matthews, J. W., Mader, S., and Light, T. B., J. Appl. Phys. 41, 3800 (1970).Google Scholar
[6] Fitzgerald, E. A., to be published in Materials Scicence Reports.Google Scholar
[7] Fitzgerald, E. A., Xie, Y. H., Brasen, D., Green, M. L., Michel, J., Freeland, P. E., and Weir, B. E., J. Electronic Materials 19, 949 (1990).Google Scholar
[8] Schroter, W., Brion, H. G. and Siethoff, H., J. Appl. Phys. 54, 1816 (1983);Google Scholar
Hull, R., Bean, J. C., Werger, D. J., Leibenguth, R. E., Appl. Phys. Lett. 52, 1605 (1988).Google Scholar
[9] Volkert, C. A., Fitzgerald, E. A., Hull, R., Mii, Y. J., and Xie, Y. X., to be published in J. Electronic Materials.Google Scholar
[10] Fitzgerald, E. A., Xie, Y. H., Green, M. L., Brasen, D., Kortan, A. R., Michel, J., Mii, Y. J., and Weir, B. E., to be published in Appl. Phys. Lett.Google Scholar
[11] Xie, Y. H., Fitzgerald, E. A., to be published.Google Scholar
[12] Mii, Y. J., Xie, Y. H., Fitzgerald, E. A., Monroe, Don, Thiel, F. A., Weir, B. E., and Feldman, L. C., submitted to Appl. Phys. Lett.Google Scholar