Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-04T16:57:59.212Z Has data issue: false hasContentIssue false
  • English
  • Français

Strained-Si Mos Field-Effect Transistors: Building Devices on Relaxed -SI1−xGEx Buffer Layers

Published online by Cambridge University Press:  15 February 2011

Jeffrey J. Welser
Jeffrey J. Welser*
Affiliation:
Stanford University, Solid State Electronics Lab., Stanford, California 94305-4055
Get access

Abstract

The experimental application of strained-Si / relaxed-Si1−xGex heterostructures to n-MOSFETs is discussed, focusing on the enhanced mobility provided by the strain. This paper provides an overview of the theoretically-predicted electronic properties of these heterostructures, as well as their growth. Several practical issues which arise in MOS applications are covered, including the effect of the relaxed-Si1−xGex, buffer layers on diode performance, and the observation of self-heating effects in the output characteristics of the MOS transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 309
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[l] Vogelsang, T. and Hofmann, K.R., IEEE Trans. Electron Devices 39 (11), 2641 (1992).Google Scholar
[2] Miyata, H., Yamada, T., and Ferry, D.K., Appl. Phys. Lett. 62 (21), 2661 (1993).Google Scholar
[3] People, R. and Bean, J.C., Appl. Phys. Lett. 48 (8), 538 (1986).Google Scholar
[4] Walle, C.G. Van de and Martin, R.M., Phys. Rev. B 34 (8), 5621 (1986).Google Scholar
[5] Fitzgerald, E.A., Xie, Y.-H., Monroe, D., Silverman, P.J., Kuo, J.M., Kortan, A.R., Thiel, F.A., and Weir, B.E., J. Vac. Sci. Technol. B 10 (4), 1807 (1992).Google Scholar
[6] LeGoues, F.K., Meyerson, B.S., Morar, J.F., and Kirchner, P.D., J. Appl. Phys. 71 (9), 4230 (1992).Google Scholar
[7] Xie, Y.H., Fitzgerald, E.A., Mii, Y.J., Monroe, D., Thiel, F.A., Weir, B.E., and Feldman, L.C., in Silicon Molecular Beam Epitaxy Symposium, Anaheim, CA, 1991. (Mater. Res. Soc. Proc. 220, 413).Google Scholar
[8] Schäffler, F., Többen, D., Herzog, H.-J., Abstreiter, G., and Höllander, B., Semicond. Sci. Technol. 7 260 (1992).Google Scholar
[9] Ismail, K., Arafa, M., Saenger, K.L., Chu, J.O., and Meyerson, B.S., Appl. Phys. Lett. 66 (9), 1077 (1995).Google Scholar
[10] König, U. and Schäffler, F., IEEE Electron Device Lett. 14 (4), 205 (1993).Google Scholar
[11] Xie, Y.H., Monroe, D., Fitzgerald, E.A., Silverman, P.J., Thiel, F.A., and Watson, G.P., Appl. Phys. Lett. 63 (16), 2263 (1993).Google Scholar
[12] Ismail, K., Meyerson, B.S., Rishton, S., Chu, J., Nelson, S., and Nocera, J., IEEE Electron Device Lett. 13 (5), 229 (1992).Google Scholar
[13] König, U., Boers, A.J., Schäffler, F., and Kasper, E., Electron. Lett. 28 (2), 160 (1992).Google Scholar
[14] Welser, J., The Application of Strained-Silicon/Relaxed-Silicon Germanium Heterostructures to Metal-Oxide-Semiconductor Field-Effect Transistors. Ph.D. thesis, Stanford University, 1994.Google Scholar
[15] Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27 118 (1974).Google Scholar
[16] Herring, C. and Vogt, E., Phys. Rev. 101 (3), 944 (1956).Google Scholar
[17] Hensel, J.C. and Feher, G., Phys. Rev. 129 (3), 1041 (1963).Google Scholar
[18] Manku, T. and Nathan, A., J. Appl. Phys. 69 (12), 8414 (1991).Google Scholar
[19] Monroe, D., Xie, Y.-H., Fitzgerald, E.A., and Silverman, P.J., in Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, Boston, MA, 1992. (Mater. Res. Soc. Proc. 281, 449).Google Scholar
[20] Hsu, J.W.P., Fitzgerald, E.A., Xie, Y.H., Silverman, P.J., and Cardillo, M.J., Appl. Phys. Lett. 61 (11), 1293 (1992).Google Scholar
[21] Ismail, K., LeGoues, F.K., Saenger, K.L., Arafa, M., Chu, J.O., Mooney, P.M., and Meyerson, B.S., Phys. Rev. Lett. 73 (25), 3447 (1994).Google Scholar
[22] Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., and Herzog, H.J., Phys. Rev. Lett. 54 (22), 2441 (1985).Google Scholar
[23] Mooney, P.M., Dacol, F.H., Tsang, J.C., and Chu, J.O., Appl. Phys. Lett. 62 (17), 2069 (1993).Google Scholar
[24] Welser, J., Hoyt, J.L., Takagi, S., and Gibbons, J.F., in International Electron Devices Meeting, San Francisco, CA, 1994. (IEDM Technical Digest, 373).Google Scholar
[25] Welser, J., Hoyt, J.U, and Gibbons, J.F., IEEE Electron Device Lett. 15 (3), 100 (1994).Google Scholar
[26] Welser, J., Hoyt, J.L., and Gibbons, J.F., Jpn. J. Appl. Phys. 33 (Part 1, No. 4B), 2419 (1994).Google Scholar
[27] Patton, G.L., Iyer, S.S., Delage, S.L., Gannin, E., and Mcinstosh, R.C., in Epitaxy of Semiconductor Layered Structures Symposium, Boston, MA, 1987. (Mater. Res. Soc. Proc. 102, 295).Google Scholar
[28] Iyer, S.S., Solomon, P.M., Kesan, V.P., Bright, A.A., Freeouf, J.L., Nguyen, T.N., and Warren, A.C., IEEE Electron Device Lett. 12 (5), 246 (1991).Google Scholar
[29] Sabnis, A.G. and Clemens, J.T., in International Electron Devices Meeting, Washington, D.C., 1979. (IEDM Technical Digest. 18).Google Scholar
[30] Hairapetian, A., Gitlin, D., and Viswanathan, C.R., IEEE Trans. Electron Devices 36 (8), 1448 (1989).Google Scholar
[31] Takagi, S., Iwase, M., and Toriumi, A., in International Electron Devices Meeting, San Francisco, CA, 1988. (IEDM Technical Digest. 398).Google Scholar
[32] Nayak, D.K., Woo, J.C.S., Park, J.S., Wang, K.L., and MacWilliams, K.P., Appl. Phys. Lett. 62 (22), 2853 (1993).Google Scholar
[33] Nayak, D.K. and Chun, S.K., Appl. Phys. Lett. 64 (19), 2514 (1994).Google Scholar
[34] Braunstein, R., Moore, A.R., and Herman, F., Phys. Rev. 109 (3), 695 (1958).Google Scholar
[35] McDaid, L.S., Hall, S., Mellor, P.H., and Eccleston, W., Electron. Lett. 25 (13), 827 (1989).Google Scholar
[36] Welser, J., Hoyt, J.L., and Gibbons, J.F., in Dev. Res. Conf., Santa Barbara, CA, 1993.Google Scholar
[37] Dismukes, J.P., Ekstrom, L., Steigmeier, E.F., Kudman, I., and Beers, D.S., J. Appl. Phys. 35 (10), 2899 (1964).Google Scholar
[38] Pinto, M.R., Sangiorgi, E., and Bude, J., IEEE Electron Device Lett. 14 (8), 375 (1993).Google Scholar