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Strained Quantum Wells for P-channel InGaAs CMOS

Published online by Cambridge University Press:  01 February 2011

Padmaja Nagaiah ,
Vadim Tokranov ,
Michael Yakimov  and
Serge Oktyabrsky
Padmaja Nagaiah
Affiliation:
pnagaiah@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Vadim Tokranov
Affiliation:
vtokranov@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Michael Yakimov
Affiliation:
MYakimov@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
Serge Oktyabrsky
Affiliation:
SOktyabrsky@uamail.albany.edu, University at Albany, SUNY, College of Nanoscale Science and Engineering, Albany, New York, United States
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Abstract

We present experimental results on the effect of strain on hole transport in InGaAs quantum well (QW) structures. Indium content was varied from lattice matched to high compressive stress in InGaAs/InP QW and the transport properties were analyzed at various temperatures (T = 77-300 K) using Hall measurements. The effect of QW thickness (4-20 nm) on hole transport is also presented. The current best results include room temperature mobility and sheet resistance of 390 cm2/V-s and 8500 Ω/sq., respectively. It was observed that the mobility had a T-1.8 dependence indicating similar scattering mechanism in almost all of the samples with prominent mechanism being due to interface and barrier scattering. Further optimization of p-channel for InGaAs CMOS needs to be performed using the above results as guidelines.

Keywords

Hall effectIII-Vmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1108: Symposium A – Performance and Reliability of Semiconductor Devices , 2008 , 1108-A12-01
Copyright
Copyright © Materials Research Society 2009

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References

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