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Strain Relaxation Via Interface Nucleation of Misfit Dislocations in Intermixing Layers

Published online by Cambridge University Press:  25 February 2011

Hyo-Hoon Park ,
Jung Kee Lee ,
El-Hang Lee ,
Jeong Yong Lee  and
Soon-Ku Hong
Hyo-Hoon Park
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8, Daeduk Science Town, Daejeon 305–606, Republic of Korea
Jung Kee Lee
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8, Daeduk Science Town, Daejeon 305–606, Republic of Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, P.O. Box 8, Daeduk Science Town, Daejeon 305–606, Republic of Korea
Jeong Yong Lee
Affiliation:
Department of Electronic Materials and Engineering, Korea Advanced Institute of Science and Technology, Daeduk Science Town, Daejeon 305–701, Republic of Korea
Soon-Ku Hong
Affiliation:
Department of Electronic Materials and Engineering, Korea Advanced Institute of Science and Technology, Daeduk Science Town, Daejeon 305–701, Republic of Korea
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Abstract

The strain relaxation mechanism via the homogeneous nucleation of misfit dislocations from interface during interdiffusion in lattice-matched semiconductor heterostructures has been investigated. Transmission electron microscopy studies in intermixed GaInAsP/InP heterostructures revealed that the critical interdiffusion depth for the nucleation of 90° 1/6<112> partial dislocations from a tensile interface is much shallower than that of 60° 1/2<110> perfect dislocations from a compressive interface. A critical thickness model for the interface nucleation of these dislocations is developed as a modification of the classical surface nucleation'model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 479
Copyright
Copyright © Materials Research Society 1992

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References

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