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Strain Relaxation and Oxide Formation on Annealed W/C Multilayers

Published online by Cambridge University Press:  15 February 2011

J. F. Geisz
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
Y. H. Phang
Affiliation:
Material Science Program, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
M. G. Lagally
Affiliation:
Material Science Program, University of Wisconsin, Madison, WI 53706
F. Cardone
Affiliation:
T.J. Watson Research Center, IBM, Yorktown Heights, NY 10598
R. M. Potemski
Affiliation:
T.J. Watson Research Center, IBM, Yorktown Heights, NY 10598
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Abstract

Tungsten-carbon (W/C) Multilayer structures are used as X-ray mirrors and other optical elements. The optical properties of such elements are highly sensitive to changes in strain due to thermal processing. Sensitive curvature measurements were performed on 40A period W/C Multilayer structures on Si substrates using a two beam laser reflection technique. A compressive stress of approximately 1530 MPa was measured in these sputtered multilayer films. Thermal annealing to 500 C in air and under vacuum resulted in very little strain relaxation in the multilayers but X-ray diffraction data show a slight increase of the multilayer period. Significant strain relaxation, though, was observed when a 400Å W buffer layer was included. Thermal annealing of these samples to 400–500°C resulted in large strain relaxation due to the formation of a-W crystals in the buffer layer. Moderate oxide formation on air annealed samples as measured by SIMS was shown not to be a dominant mechanism of strain relaxation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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