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Strain Effects in Superlattices of Diluted Magnetic Semiconductor ZnTe/Zn1-xMnxTe

Published online by Cambridge University Press:  15 February 2011

Chenjia Chen
Affiliation:
Department of Physics, Peking University, Beijing 100871, People's Republic of China
Xi Chen
Affiliation:
Department of Physics, Peking University, Beijing 100871, People's Republic of China
Xiaoli Li
Affiliation:
Department of Physics, Peking University, Beijing 100871, People's Republic of China
Haitiao Li
Affiliation:
Department of Physics, Peking University, Beijing 100871, People's Republic of China
Xuezhong Wang
Affiliation:
Department of Physics, Peking University, Beijing 100871, People's Republic of China
Zhen Ling
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Jie Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
Xun Wang
Affiliation:
Surface Physics Laboratory, Fudan University, Shanghai 200433, People's Republic of China
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Abstract

ZnTe/Zn1-xMnxTe superlattices were grown on GaAs (001) substrates by molecular beam epitaxy. The multi-phonon processes including overtones and combinations of optical phonons have been studied by near resonant Raman scattering in the temperature range 13 K to 300 K. The strain arising from lattice mismatch gives rise to a shift in the optical-phonon frequencies. A two-phonon interface mode of superlattice has been observed and identified for the first time. Strain-induced red shifts of exciton energies related to transitions from the conduction subband to the light-hole and heavy-hole subband have been found by photoreflectance measurements. Experimental results agree well with the calculated strain-induced shift in superlattices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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