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Strain Effects in GaN on Sapphire: Towards a Quantitative Comprehension

Published online by Cambridge University Press:  21 February 2011

O. Briot ,
J.P. Alexis ,
B. Gil  and
R.L. Aulombard
O. Briot
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
J.P. Alexis
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
B. Gil
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
R.L. Aulombard
Affiliation:
CNRS-GES - Université de Montpellier II, C.C. 074 Place E.Bataillon, 34095 Montpellier Cedex 5-France
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Abstract

We present here a detailed investigation of the optical properties of GaN epilayers grown by low pressure MOVPE on sapphire substrates, using 2K photoluminescence as well as 2K reflectance spectroscopy. A large series of samples has been grown under eclectic conditions (V/III ratio, growth temperature, nitridation steps,...) which allows us to propose the first semi-quantitative investigation of the sample-dependent band gap energies. This dependence of the bandgap is analyzed in terms of i) residual stress, ii) exciton parameters and iii) deformation potential characteristics of the A, B, C excitons. the residual stress cannot be simply explained in terms of the differences between the thermal expansion coefficients of the various compounds, but are strongly correlated to the V/III growth ratio imposed during the growth, and subsequently to the influence of this parameter at the scale of electronic and structural characteristics of the deposited layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 411
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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