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Strain and Shape in Self-Assembled Quantum Dots Studied by X-Ray Grazing Incidence Diffraction

Published online by Cambridge University Press:  10 February 2011

I. Kegel
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 Mürnchen, Germany
T. H. Metzger
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 Mürnchen, Germany
J. Peisl
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 Mürnchen, Germany
P. Fratzl
Affiliation:
Erich Schmid Institute of Solid State Physics, Austrian Academy of Sciences, University of Leoben, A-8700 Leoben, Austria
A. Lorke
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 Mürnchen, Germany
J. P. Kotthaus
Affiliation:
Sektion Physik, Ludwig-Maximilians-Universität München, D-80539 Mürnchen, Germany
J. M. Garcia
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, USA
P. M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106, USA
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Abstract

We have developed a method to determine the relationship between strain and lateral size of coherent self-organized quantum dots. In our approach, X-ray grazing incidence diffraction is used to collect information on strain and shape effects in the vicinity of a prominent surface reflection. We demonstrate that for highly strained nano-scale islands it is possible to separate strain-induced and form factor-induced scattering without comparing different reflections. Experimental data from InAs on GaAs(100) quantum dots is discussed with respect to this model. Reciprocal space mapping around the (220) surface reflection shows a linear relationship between relaxation from the substrate lattice parameter and the outer perimeter of the dot. In addition, the functional form of the gradient of relaxation is found to be nonmonotonous and rapidly increasing towards the tip of the dot.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Fafard, S., Hinzer, K., Raymond, S., Dion, M., McCaffrey, J. and Feng, Y., Charbonneau, S., Science 274, 1350 (1996)Google Scholar
2. Dobbs, H. T. and Vvedensky, D. D., Zangwill, A., Johansson, J., Carlsson, N., Seifert, W., Phys. Rev. Lett. 79, 897 (1997)Google Scholar
3. Pietsch, U., Metzger, H., Rugel, S., Jennichen, B., and Robinson, I. K., J. AppI. Phys. 74, 2381 (1993)Google Scholar