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Strain Analysis in Thin La1−xCaxMnO3 Films by Grazing Incidence X-ray Scattering

Published online by Cambridge University Press:  10 February 2011

M. Petit ,
L. J. Martinez-Miranda ,
M. Rajeswari ,
A. Biswas ,
D. J. Kang  and
T. Venkatesan
M. Petit
Affiliation:
Dept. of Materials and Nuclear Eng. And NSF-MRSEC, University of Maryland, College Park, MD, 20742, martinez@eng.umd.edu
L. J. Martinez-Miranda
Affiliation:
Dept. of Materials and Nuclear Eng. And NSF-MRSEC, University of Maryland, College Park, MD, 20742, martinez@eng.umd.edu
M. Rajeswari
Affiliation:
NSF-MRSEC and Center for Superconductivity, University of Maryland, College Park, MD 20742
A. Biswas
Affiliation:
NSF-MRSEC and Center for Superconductivity, University of Maryland, College Park, MD 20742
D. J. Kang
Affiliation:
NSF-MRSEC and Center for Superconductivity, University of Maryland, College Park, MD 20742
T. Venkatesan
Affiliation:
NSF-MRSEC and Center for Superconductivity, University of Maryland, College Park, MD 20742 Dept. of Physics and Dept. of Electrical Eng., University of Maryland, College Park, MD 20742
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Abstract

We have performed depth profile analyses of the lattice parameters in epitaxial thin films of La1−xCaxMno3 (LCMO), where x = 0.33 or 0.3, to understand the evolution of strain relaxation processes in these materials. The analyses were done using Grazing Incidence X-ray Scattering (GIXS) on films of different thicnesses on two different substrates, (100) oriented LaAlO3 (LAO), with a lattice mismatch of ∼2% and (110) oriented NGO, with a lattice mismatch of less than 0.1%. Films grown on LAO can exhibit up to three in-plane strained lattice constants, corresponding to a slight orthorhombic distortion of the crystal, as well as near-surface and columnar lattice relaxation. As a function of film thickness, a crossover from a strained film to a mixture of strained and relaxed regions in the film occurs in the range of 700 Å. The structural evolution at this thickness coincides with a change in the resistivity curve near the metalinsulator transition. The in-plane compressive strain has a range of 0.2 – 1.5%, depending on the film thickness for filsm in the range of 400 - 1500 A.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 602: Symposium JJ – Magnetoresistive Oxides & Related Materials , 1999 , 195
Copyright
Copyright © Materials Research Society 2000

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