Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-07-03T03:41:59.123Z Has data issue: false hasContentIssue false
  • English
  • Français

Stochastic Dislocation Dynamics under Creep Conditions in Metals

Published online by Cambridge University Press:  01 February 2011

Masato Hiratani  and
Hussein M. Zbib
Hussein M. Zbib
Affiliation:
School of Mechanical and Materials Engineering, Washington State University Pullman, WA 99164-2920
Get access

Abstract

A stochastic model is proposed to study dislocation dynamics in metallic single crystals. A Langevin type thermal fluctuation is taken into account for the model to maintain thermal equilibrium. This approach works as Brownian motion of segmental dislocations. Additionally, a new model for implementing the cross slip mechanism in FCC metals is developed based on results obtained by atomistic simulations. This new model is capable of simulating realistic thermal processes such as thermally activated dislocation motion during easy glide or cross slip during cold working of metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 731: Symposium W – Modeling and Numerical Simulation of Materials Behavior and Evolution , 2002 , W1.7
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kubin, L. P., Canova, G., Condat, M., Devincre, B., Pontikis, V., and Brechet, Y., Mater. Sci. Eng. 1, 1–17 (1992).Google Scholar
[2] Zbib, H. M., Rhee, M., and Hirth, J.P., Int. J. Mech. Sci. 40, 113–127 (1998).Google Scholar
[3] Rhee, M., Zbib, H. M., and Hirth, J. P., Model. Sim. Mater. Sci. Eng. 6, 467–492 (1998).Google Scholar
[4] Ghoniem, N. M., Tong, S. H., and Sun, L. Z., Phys. Rev. B, 61, 913–927 (2000).Google Scholar
[5] Schwarz, K. W., J. Appl. Phys. 85, 108 (1999).Google Scholar
[6] Ronnpagel, D., Streit, T., and Pretorius, T., Phys. Stat. Sol.(a), 135, 445–454 (1993).Google Scholar
[7] Raabe, D., Comp. Mater. Sci. 11, 1–15 (1998).Google Scholar
[8] Hiratani, M., and Nadgorny, E. M., Acta Mater. 40, 4337–4346 (2001).Google Scholar
[9] Hiratani, M., M, and Zbib, H. M., J. Eng. Mater. Tech. 124 (2002) in press.Google Scholar
[10] Cai, W., Bulatov, V.V., and Yip, S., J. Comp. Aid. Mater. Desgn. 6, 175–183 (1999)Google Scholar
[11] Lin, K., K and Chrzan, D.C., Phys. Rev. B, 60, 3799–3805 (1999).Google Scholar
[12] Rasmussen, T. and Jacobsen, K. W., Phys. Rev. B, 56, 2977–2990 (1997).Google Scholar
[13] Rao, S. and Parthasarathy, T.A., Phil. Mag. A, 79, 167–1192 (1999).Google Scholar