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Stimulated Opticaltransitions in Er-Doped Silicon Nanostructures

Published online by Cambridge University Press:  11 February 2011

B. V. Kamenev ,
V. I. Emel'yanov ,
V. Yu. Timoshenko ,
P. K. Kashkarov ,
M.V. Lomonosov ,
E. I. Terukov  and
V. Kh. Kudoyarova
B. V. Kamenev
Affiliation:
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102
V. I. Emel'yanov
Affiliation:
Moscow State University, Moscow, Russia
V. Yu. Timoshenko
Affiliation:
Moscow State University, Moscow, Russia
P. K. Kashkarov
Affiliation:
Moscow State University, Moscow, Russia
M.V. Lomonosov
Affiliation:
Moscow State University, Moscow, Russia
E. I. Terukov
Affiliation:
Ioffe Physico-Technical Institute, St. Petersburg, Russia
V. Kh. Kudoyarova
Affiliation:
Ioffe Physico-Technical Institute, St. Petersburg, Russia
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Abstract

Photoluminescence (PL) of Er3+ ions in nanocrystalline (amorphous) silicon matrix has been investigated under a high level of optical excitation. A superlinear increase of the PL intensity, a shortening of the PL decay time, and strong angular dependence were found at the excitation intensity above 200 kW/cm2. These effects are observed only in samples with presence of silicon nanocrystalls and explained by stimulated optical transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F9.2
Copyright
Copyright © Materials Research Society 2003

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References

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