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Step Coverage of Pb(ZrTi)O3 Thin Films Grown by Mocvd

Published online by Cambridge University Press:  10 February 2011

M. Shimizu ,
S. Hyodo ,
H. Fujisawa ,
H. Niu  and
T. Shiosaki
M. Shimizu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–22, Japan
S. Hyodo
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–22, Japan
H. Fujisawa
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–22, Japan
H. Niu
Affiliation:
Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, 2167 Shosha, Himeji, Hyogo 671–22, Japan
T. Shiosaki
Affiliation:
Department of Electronic Science and Engineering, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606, Japan
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Abstract

Step coverage of PZT grown by MOCVD was influenced by the growth temperature, the reaction pressure and the aspect ratio of the trench. PZT films grown on Si steps at growth temperatures ranging from 500 to 600°C and at reaction pressures ranging from 3 to 10Torr showed a step coverage of 52 to 86%. The step coverage of PZT grown at 600°C and at 5Torr – conditions which were suitable for the growth of perovskite phase – was 75%. The step coverage of Pt on Si and on SiO2 was 20% and 25%, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 201
Copyright
Copyright © Materials Research Society 1996

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