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A Stem Study of P and Ge Segregation to Grain Boundaries in Si1-xGex Thin Films

Published online by Cambridge University Press:  15 February 2011

W. Qin ,
D. G. Ast  and
T. I. Kamins
W. Qin
Affiliation:
Institute of Microelectronics, 11 Science Park Road, Singapore, 117685
D. G. Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
T. I. Kamins
Affiliation:
Hewlett-Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94303
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Abstract

The segregation of phosphorus to grain boundaries in phosphorus implanted Si0.87Ge0.13 films, deposited by chemical vapor deposition (CVD), was directly observed by scanning transmission electron microscopy (STEM) with energy dispersive x-ray (EDX) microanalysis. The segregation was determined to be a thermal equilibrium process by measuring and comparing the average phosphorus concentrations at the grain boundaries in Si0.87Ge0.13 films subjected to 700, 750 or 800°C annealing, following the implantation and 1000°C annealing processes. The measured segregation energy was 0.28 eV/atom. No Ge segregation was found at grain boundaries in phosphorus implanted Si0.87Ge0.13 films by STEM x-ray microanalysis. Neither was evidence shown by STEM microanalysis that Ge segregated to grain boundaries in intrinsic Si1-xGex films with x = 0.02, 0.13 and 0.31. Secondary ion mass spectrometry (SIMS) analysis showed that these intrinsic Si1-xGex films contained 1019 to 4 × 1019/cm-3H, depending on the deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 201
Copyright
Copyright © Materials Research Society 1999

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