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Statistical Phonon Transport Model of Thermal Transport in Silicon

Published online by Cambridge University Press:  31 January 2011

Thomas W Brown  and
Edward Hensel
Thomas W Brown
Affiliation:
twb3615@rit.edu, Rochester Institute of Technology, Mechanical Engineering, Rochester, New York, United States
Edward Hensel
Affiliation:
echeme@rit.edu, Rochester Institute of Technology, Mechanical Engineering, Rochester, New York, United States
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Abstract

Thermal transport in crystalline materials at various length scales can be modeled by the Boltzmann transport equation (BTE). A statistical phonon transport (SPT) model is presented that solves the BTE in a statistical framework that incorporates a unique state-based phonon transport methodology. Anisotropy of the first Brillouin zone (BZ) is captured by utilizing directionally-dependent dispersion curves obtained from lattice dynamics calculations. A rigorous implementation of phonon energy and pseudo-momentum conservation is implemented in the ballistic thermal transport regime for a homogeneous silicon nanowire with adiabatic specular boundary conditions.

Keywords

Sisimulationnanoscale
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1229: Symposium LL – Multiphysics Modeling in Materials Design , 2009 , 1229-LL09-09
Copyright
Copyright © Materials Research Society 2010

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