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Stacking Fault Energy Calculations in 6H- and 15R-SiC

Published online by Cambridge University Press:  21 February 2011

F. R. Chien ,
S. R. Nutt  and
W. S. Yoo
F. R. Chien
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
S. R. Nutt
Affiliation:
Department of Materials Science, University of Southern California, Los Angeles, CA 90089
W. S. Yoo
Affiliation:
Advanced Technology Materials, Inc., Danbury, CT 06810
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Abstract

As-grown SiC single crystals and as-deposited SiC epilayers often exhibit stacking faults. The most probable fault configurations that occur in 6H- or 15R-SiC crystals are deduced from calculations of the stacking fault energies using a modified Ising model with the Ising parameters taken from earlier ab initio calculations. In this study, experimental TEM observations reveal stacking fault configurations in 6H- and 15R-SiC, and the observed configurations are compared with calculated stacking fault energies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 399
Copyright
Copyright © Materials Research Society 1994

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References

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