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A Stable n-Channel Indium Phosphide Field-Effect Transistor with an Amorphous Hydrogenated Silicon Gate

Published online by Cambridge University Press:  28 February 2011

E. Roditi ,
A.A. Iliadis  and
A. Christou
E. Roditi
Affiliation:
Foundation for Research and Technology-HELLAS, 711 10 Heraklio, Crete, Greece
A.A. Iliadis
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, Maryland 20742
A. Christou
Affiliation:
Naval Research Laboratory, Washington D.C. 20375-5000
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Abstract

InP field-effect transistors fabricated with an amorphous hydrogenated Si (a-Si:H) gate resulted in metal-insulator-like FET characteristics with no observable current drift and a transconductance of 30–38 mS/mm. The high stability of this gate system is attributed to the low temperature of deposition and the hydrogen passivation of the InP surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 811
Copyright
Copyright © Materials Research Society 1990

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References

1Itoh, T. and Ohata, K., IEEE Trans. Electron Devices ED–30, 811 (1983).Google Scholar
2Tell, B., Liao, A.S.H., Brown-Goebler, K.F., Bridges, T.J., Buzkhaidt, G., Chang, T.Y., and Bergano, N.S., IEEE Trans. Electron Devices ED–32, 2319 (1985).Google Scholar
3Kulisch, W., Rombach, R. and Kassing, R., Appl. Surf. Sci. 30, 89 (1987).Google Scholar
4Takahashi, S., Nakada, T., Kamimuza, K., Zama, H., Hattori, T. and Kunioka, A., Jpn. J. Appl. Phys. 26, L1606 (1987).Google Scholar
5Fathimulla, M., Loughran, T., Stecker, L., Hemplfling, E., Mattingly, M. and Aina, O., IEEE Elect. Dev. Let. 9, 223 (1988).Google Scholar
6Hanson, C.M., Chu, P., Wieder, H.H. and Clawson, A.R., IEEE Elec. Dev. Let. EDL–8, 53 (1987).Google Scholar
7Wager, J., Owen, S.J.T. and Pzasad, S.J., J. Electrochem. Soc. 134, 160 (1987).Google Scholar
8Iwase, Y., Aral, I. and Sugano, T., Appl. Phys. Lett. 52, 1437 (1988).Google Scholar
9Loualiche, S., Vaudry, C., Henry, L. and LeCorre, A., Electron. Lett. 22, 896 (1986).Google Scholar
10Pankove, J. and Tarng, M.L., Appl. Phys. Lett. 34, 156 (1979).Google Scholar
11Johnon, J., Forrest, S.R., Zeisse, C.R. and Nguyen, R., Appl. Phys. Lett. 52, 495 (1988).Google Scholar
12Boher, P., Renaud, M., Lopez-Villegas, J.M., Schneider, J. and Chane, J.P., Appl. Surf. Sci. 30, 100 (1987).Google Scholar
13Shayer, W., Mackie, W. and Swanson, L.W., Surf. Sci. 34, 225 (1973).Google Scholar