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Stability of the Fullerenes Thin Film Deposited on the SI(100) Surface

Published online by Cambridge University Press:  15 February 2011

H. Rafii-Tabar ,
Y. Kawazoe  and
H. Kamiyama
H. Rafii-Tabar
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
Y. Kawazoe
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
H. Kamiyama
Affiliation:
Institute For Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, JAPAN
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Abstract

We have performed a constant temperature classical molecular dynamics simulation of the epitaxial growth of a C60 monolayer film deposited on the dimerized Si(100) surface. Our simulation, based on non-central many-body inter-atomic potentials, is capable of predicting the structural stability of the C60 film and the Si substrate and provides a theoretical basis for the results of a recently-performed STM- based experiment for this system.

Three-dimensional geometries have been generated on computer and used for the animation of the simulation runs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 467
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1 Tanigaki, K. et al. , Nature 352, 222 (1991).Google Scholar
2 Yannoni, C.S. et al. , J.Phys. Chem. 95, 9(1991).Google Scholar
3 Saito, S. and Oshiyama, A., Phys. Rev. Lett, 66, 2637 (1991).Google Scholar
4 Jishi, R.A., Mine, R.M., and Dresselhaus, M.S., Phys. Rev., B,45, 13685 (1992).CrossRefGoogle Scholar
5 Cheng, A. and Klein, M., Phys. Rev., B,45, 1889 (1992).Google Scholar
6 Abrefah, J. et al. , Appl. Phys. Lett. 60, 1313 (1992).Google Scholar
7 Wilson, R.J. et al. , Nature 348, 621 (1990).Google Scholar
8 Li, Y.Z. et al. , Science 253, 429 (1991).Google Scholar
9 Hashizume, T. et al. , Jpn. J. Appl. Phys. 31, L880 (1992).Google Scholar
10 Tersoff, J., Phys. Rev. B,39, 5566(1989).Google Scholar
11 Allen, M.P. and Tildesley, D.J., Computer Simulation of liquids (Clarendon Press Oxford, 1987).Google Scholar