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The Stability of Si-Si1-xGex Strained Layer Heterostructures.

Published online by Cambridge University Press:  22 February 2011

D. C. Houghton ,
J-M. Baribeau ,
K. Song  and
D. D. Perovic
D. C. Houghton
Affiliation:
National Research Council of Canada, Ottawa, Ontario, KIA OR8, CANADA. British Telecom Research Labs, Martlesham Heath, Ipswich, IP5 7RE, UK.
J-M. Baribeau
Affiliation:
National Research Council of Canada, Ottawa, Ontario, KIA OR8, CANADA.
K. Song
Affiliation:
National Research Council of Canada, Ottawa, Ontario, KIA OR8, CANADA.
D. D. Perovic
Affiliation:
University of Toronto, Toronto, Ontario, Canada, M5S 1A4.
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Abstract

The structural stability of strained layer superlattices (SLS's) is addressed using an equilibrium model and then compared to the stability of single strained layers. Relaxation mechanisms are described for various superlattice geometries. The application of a critical thickness/strain criterion to define stability limits was found to be very useful in predicting the detailed relaxation process. The competition between relaxation by misfit accommodation at the base of the SLS and at individual strained interfaces is considered for the initial condition of full coherency and after partial relaxation. Experimental data for the Si-Ge strained layer system are presented; as-grown by MBE and after annealing in the temperature range 500°C – 900°C. The extent of relaxation and the detailed dislocation structure within the SLS's were determined by X-ray rocking curve analysis, Nomarski interference microscopy and transmission electron microscopy. The abrupt changes in relaxation behaviour indicate that rigid boundaries between stable and metastable structures do exist, as predicted by the equilibrium models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 159
Copyright
Copyright © Materials Research Society 1989

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References

l. Matthews, .J.W. and Blakeslee, A.E., J.Cryst Growth 27,118 (1974).Google Scholar
2. Matthews, J.W., J.Vac. Sci. Technol. 12,126(1975).Google Scholar
3. Merwe, Jan H. van der and Jesser, W.A., J.Appl. Phys. 63,1509 (1988).Google Scholar
4. Hull, R.,Bean, J.C.,Cerdeira, F.,Fiory, A.T. and Gibson, J.M., Appl. Phys.Lett. 48,56 (1986).Google Scholar
5. Tsao, J.Y. and Dodson, B.W., Appl. Phys. Lett. 53,848 (1988).Google Scholar
6. People, R. and Bean, J.C., Appl. Phys. Lett. 47,322 (1985), R.People and J.C.Bean, Appl. Phys. Lett. 49,229 (1986).CrossRefGoogle Scholar
7. Fritz, I.J. Appl. Phys. Lett. 51,1080(1987)Google Scholar
8. Hirth, J.P. and Lothe, J., Theory of Dislocations (Wiley-Interscience,New York,1982) 2nd ed.Google Scholar
9. Timoshenko, S.P. and Goodier, J.N.,Theory of Elasticity,3rd ed (McGraw-Hill,New York,1970)Google Scholar
10. Houghton, D.C.,Lockwood, D.J.,Dharma-Wardana, M.W.C.,Fenton, E.W.,Baribeau, J.M. and Denhoff, M.W., J.Cryst.Growth 81,434(1987).Google Scholar