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Stability And Precipitation Kinetics In Si1-yCy/Si and Si1-x-yGexC/Si Heterostructures Prepared by Solid Phase Epitaxy

Published online by Cambridge University Press:  15 February 2011

J. W. Strane ,
S. T. Picraux ,
H. J. Stein ,
S. R. Lee ,
J. Candelaria ,
D. Theodore  and
J. W. Mayer
J. W. Strane
Affiliation:
Cornell University, Dept. MS&E, Ithaca NY 14853.
S. T. Picraux
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
H. J. Stein
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
S. R. Lee
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185.
J. Candelaria
Affiliation:
Motorola Inc., MRT, Mesa, AZ, 85202.
D. Theodore
Affiliation:
Motorola Inc., MRT, Mesa, AZ, 85202.
J. W. Mayer
Affiliation:
Arizona State University, Dept. of Chem. Bio. and Matls. Eng., Tempe AZ 85287
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Abstract

This study investigates the stability of Metastable Si1-yCy/Si heterostructures during rapid thermal annealing (RTA) over a temperature range of 1000 – 1150° C Heterostructures of Si1-yCy/Si and Si1-x-yGexCy/Si (x=0.077, y ≤ .0014) were formed by solid phase epitaxy from C implanted, preamorphized substrates using a 30 Minute 700° C anneal in N2. The occupancy of C in substitution lattice sites was monitored by Fourier Transform Infrared Absorption spectroscopy. The layer strain was monitored by rocking curve x-ray diffraction and the structural changes in the layers were determined using plan-view and X-sectional transmission electron Microscopy (TEM). For anneals of 1150° C or above, all the substitutional C was lost from the Si lattice after 30 seconds. TEM verified that the strain relaxation was the result of C precipitating into highly aligned βSiC particles rather than by the formation of extended defects. No nucleation barrier was observed for the loss of substitutional C Preliminary results will also be discussed for Si1-x-yGexCy/Si heterostructures where there is the additional factor of the competition between strain energy and the chemical driving forces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 467
Copyright
Copyright © Materials Research Society 1994

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References

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