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Sputtering Effects and Two Dimensional Arrangement of Nanoparticles in Insulators Under High Flux Cu Implantation

Published online by Cambridge University Press:  21 February 2011

N. Kishimoto ,
C.G. Lee ,
N. Umeda ,
Y. Takeda  and
V.T. Gritsyna
N. Kishimoto
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, baraki 305-0047, Japankishin@nrim.go.jp
C.G. Lee
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, baraki 305-0047, Japan
N. Umeda
Affiliation:
Tsukuba University, I-I Ten-nodal, Tsukuba, baraki 305-0006, Japan
Y. Takeda
Affiliation:
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba, baraki 305-0047, Japan
V.T. Gritsyna
Affiliation:
Kharkov State University, Kharkov 310077, Ukraine
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Abstract

Application of negative heavy ions, alleviating surface charging on insulators, enables us to conduct low-energy and high-flux implantation, and leads to a well-defined tool to fabricate near-surface nanostructures. Negative Cu ions of 60 keV, at high doses, have generated nanocrystals in amorphous(a-)SiO2 with a size (∼10 nm) suitable for nonlinear optical devices. The kinetic processes, inside the solid and at the surface, are studied by cross-sectional TEM and tapping AFM, respectively. In a-SiO2, nanoparticles spontaneously grow with dose rate, being controlled by the surface tension and radiation-induced diffusion. Furthermore, the nanospheres give rise to a two-dimensional (2D) arrangement around a given dose rate. The 2D-distribution occurs in coincidence with enhanced sputtering where a considerable Cu fraction sublimates from the surface. The dose-rate dependence of nanoparticles indicates that the surface-sputtering process influences the intra-solid process and contributes to the 2D-distribution. A self-assembling mechanism for 2D-arrangement of nanospheres is discussed taking into account contribution of the surface sputtering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 181
Copyright
Copyright © Materials Research Society 2000

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References

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