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Sputtered SiO2:C Films Showing Visible Photoluminescence

Published online by Cambridge University Press:  10 February 2011

M. Sendova-Vassileva ,
N. Tzenov ,
D. Dimova-Malinovska  and
K. V. Josepovits
M. Sendova-Vassileva
Affiliation:
CL SENES, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, BG-1784, Sofia, Bulgaria, photomat@bgearn.bitnet
N. Tzenov
Affiliation:
CL SENES, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, BG-1784, Sofia, Bulgaria, photomat@bgearn.bitnet
D. Dimova-Malinovska
Affiliation:
CL SENES, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, BG-1784, Sofia, Bulgaria, photomat@bgearn.bitnet
K. V. Josepovits
Affiliation:
Physical Institute of the Technical University of Budapest, H- 1521 Budapest, Hungary
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Abstract

Luminescent a-Si:O:C layers were obtained by magnetron co-sputtering and annealing. Maximum photoluminescence intensity is comparable to that of porous silicon. Luminescence maximum is between 1.8 eV and 2.2 eV. X-ray photoelectron spectroscopy (XPS) finds Si-O, C-Si and C-C bonding. Secondary ion mass spectrometry(SIMS) data are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 395
Copyright
Copyright © Materials Research Society 1996

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