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A Spatially Resolved Study of Chemical Vapor Deposition of a-Si:H with Pure Thermal Excitation of Disilane

Published online by Cambridge University Press:  21 February 2011

G. Amato ,
R. Spagnolo ,
F. Fizzotti ,
C. Manfredotti ,
P. Menna  and
G. Nobile
G. Amato
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Turin, Italy
R. Spagnolo
Affiliation:
Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Turin, Italy
F. Fizzotti
Affiliation:
Dipartimento di Fisica Sperimentale Universita di Torino, Via P. Giuria 1, 10125 Turin, Italy
C. Manfredotti
Affiliation:
Dipartimento di Fisica Sperimentale Universita di Torino, Via P. Giuria 1, 10125 Turin, Italy
P. Menna
Affiliation:
ENEA, Centro Ricerche Fotovoltaiche, Localita Granatello, P.O. Box 32, 80055 Portici (Naples), Italy
G. Nobile
Affiliation:
ENEA, Centro Ricerche Fotovoltaiche, Localita Granatello, P.O. Box 32, 80055 Portici (Naples), Italy
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Abstract

Optical, electronic and structural properties of a-Si:H samples grown by Low Pressure Chemical Vapor Deposition have been investigated by means of IR spectroscopy, Raman scattering and Photothermal Deflection Spectros-copy.

Samples grown at different positions along the tube show very different properties that can be related to the amount of H and to the nature of the Si-H bonds.

The most important parameters governing the thermally excited growth of a-Si:H are presented and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 685
Copyright
Copyright © Materials Research Society 1991

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References

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