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Spatial Damage Distribution in Electron-Beam Processed Gaas-Algaas Heterostructures, Experiment and Theory

Published online by Cambridge University Press:  25 February 2011

Doran D. Smith ,
Tobin Fink  and
W. D. Braddock
Doran D. Smith
Affiliation:
U. S. Army Electronics Technology and Devices Laboratory, Fort Monmounth, NJ 07703-5000
Tobin Fink
Affiliation:
Permanent Address: New Jersey Institute of Technology, Newark, New Jersey 07102
W. D. Braddock
Affiliation:
On leave from Cornell University, Ithaca, NY 14853
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Abstract

The effect of electron beam irradiation on the transport properties of HEMT structures has been studied. The data is found to agree with a model containing no free parameters which predicts the spatial extent of the damage. As grown HEMT material was fabricated into Hall bars. The material was then characterized by measurement of 2D EG number density and drift mobility. The material was then irradiated at constant dose with electron energies between 2.5 and 20 keV. Damage was assessed by changes in the number density and mobility. The number density was essentially unchanged at all energies. No change in mobility occurred for 2.5, 15, and 20 keV, however, a decrease in the mobility occurred for energies from 5.0 to 12.5 keV. These results agree with our model of the electrons energy loss as a function of its path length. The defects are shown to be charged, and possible sources of the defects are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 697
Copyright
Copyright © Materials Research Society 1990

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References

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