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Space Charge Effects Due to Near Contact Non-Uniform Electric Fields in Semi-Insulating GaAs

Published online by Cambridge University Press:  21 February 2011

Narbeh Derhacobian  and
Nancy M. Haegel
Narbeh Derhacobian
Affiliation:
University of California, Los Angeles, Dept. of Physics, Los Angeles, CA, 90024
Nancy M. Haegel
Affiliation:
University of California, Los Angeles, Dept. of Materials Science and Engineering, Los Angeles, CA, 90024
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Abstract

Variable length semi-insulating GaAs p+-υ-n+ diodes are used to investigate the influence of near contact electric field non-uniformities on the injection of minority carriers. The results show that despite the presence of highly linear IV characteristics, significant nonuniformities in the electric field dominate the device response. The current density through the device is shown to depend on the device length with a power law J ∞ (L)1.0 at a constant bias. The experimental results are compared, with good agreement, to a theoretical model which treats semi-insulating GaAs as a trap-dominated relaxation semiconductor. Electroabsorption measurements are used to observe the slow transients associated with the appearance of near contact field nonuniformities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 101
Copyright
Copyright © Materials Research Society 1992

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References

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