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Solution-Grown Cds Thin Films For Solar Cells

Published online by Cambridge University Press:  10 February 2011

Jae Heyg Shin
Affiliation:
2, Jungang-dong, Kwacheon-city, Kyeonggi-do, 427–010, Korea Thin Film Laboratory, National Institute of Technology and Quality
Seung Wook Hyeun
Affiliation:
Dept. Chemical Engineering, Tankuk University, Seoul, Korea
Sung Ho Shin
Affiliation:
2, Jungang-dong, Kwacheon-city, Kyeonggi-do, 427–010, Korea Thin Film Laboratory, National Institute of Technology and Quality
Jung Park II
Affiliation:
2, Jungang-dong, Kwacheon-city, Kyeonggi-do, 427–010, Korea Thin Film Laboratory, National Institute of Technology and Quality
Kwang Ja Park
Affiliation:
2, Jungang-dong, Kwacheon-city, Kyeonggi-do, 427–010, Korea Thin Film Laboratory, National Institute of Technology and Quality
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Abstract

Thin films of CdS were prepared from an solution containing Cd(Ac)2, NH4OH, NH4Ac and (NH2)2CS for solar cells. Growth rate of CdS films was increased with increasing temperature of reactive solution and with decreasing concentration of NH4OH. Optical transmittances were more than 60% independent with temperature and concentrations and was changed with thickness of CdS films. Grown films mostly showed the presence of polycrystallines with mixed cubic and hexagonal phases, but showed the hexagonal preferred phases in some growth condition. The resistivities of CdS were decreased by doping boron from 104 to 101 order(Ω - cm) and the critical amount of dopant was 5 × 10 .mol %

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Devaney, W. E., Chen, W. S., Stewart, J. M. and Mickelsen, R. A., IEEE Trans. Electron Devices; 37, 428(1990).Google Scholar
2. Basol, B. M. and Kapur, V. K., IEEE Trans. Electron Devices, 37, 418(1990).Google Scholar
3. Saxena, A. K., thanagarai, R., Singh, S. P. and Agnihotri, O. P., Thin Solid Films, 131, 121(1985).Google Scholar
4. Sahu, S. C. and Sahu, S. N., Thin Solid Films, 235, 17(1993).Google Scholar
5. Dona, J. M. and Herero, J., J Electrochem. Soc., 139, 28102814(1992).Google Scholar
6. Chu, T. L., Chu, S. S. and Schultz, N., J Electrochem. Soc., 139, 2443(1992).Google Scholar
7. Kainthla, R. C., Pandya, D. K. and Chopra, K. L., J Electrochem. Soc., 127, 277(1980).Google Scholar
8. Acharaya, H. N. and Bose, H. N., Phys. Status Solid, A6,k43(1971).Google Scholar