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Solidification Interface Instabilities During Zone Melting Recrystallization Processing of Multilayer thin Film Structures

Published online by Cambridge University Press:  21 February 2011

Sharon M. Yoon ,
Christopher K. Hess  and
Ioannis N. Miaoulis
Sharon M. Yoon
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
Christopher K. Hess
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA 02155
*
* author to whom correspondence should be addressed
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Abstract

This paper describes a stability analysis of the solidification interface during graphite-strip zone-melting-recrystallization of Silicon-On-Insulator thin film structures. The study focused on instabilities induced by i) variations in the optical properties due to thickness perturbations in the structure and ii) changes in optical properties during phase change. Reflective and emissive interference effects between multilayers play a significant role in the temperature distributions during processing. The presence of a step perturbation imbedded within the film structure affects local heat absorption and resulting temperature profiles. Such disturbances that trigger instabilities at the solid-liquid interface were investigated numerically. Processing speeds which cause interface instability due to optical property variation during phase change were identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 615
Copyright
Copyright © Materials Research Society 1992

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References

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