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Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

Published online by Cambridge University Press:  21 February 2011

Xiang Lu  and
Nathan W. Cheung
Xiang Lu
Affiliation:
Applied Science and Technology Graduate Group Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Applied Science and Technology Graduate Group Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
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Abstract

Si1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 388: Symposium Q – Film Synthesis and Growth Using Energetic Beams , 1995 , 195
Copyright
Copyright © Materials Research Society 1995

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