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Solid Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on (100) Silicon

Published online by Cambridge University Press:  28 February 2011

C. Lee  and
K. S. Jones
C. Lee
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611.
K. S. Jones
Affiliation:
Department of Materials Science & Engineering, University of Florida, Gainesville, FL 32611.
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Abstract

The solid phase epitaxial regrowth (SPER) process of implantation amorphized Si0.7Ge0.3 layers (850± Å thick) grown on (100) Si has been studied by cross-sectional transmission electron microscopy. For amorphous layers produced by 40 Ar+ implantation highly defective three dimensional regrowth was observed in both Si0.7Ge0.3 and Si. Stacking faults were the principle defect formed of both materials during regrowth. SPER after amorphization via 73 Ge+ implantation was also investigated. It was found that the SPER velocity of the 73 Ge+ implanted Si0.7 Ge0.7 Ge0.3 was about twice the velocity of the 40 Ar+ implanted samples; for 73 Ge+ implanted Si it was about three times that of the 40Ar+ implanted samples. The activation energy for SPER in 40Ar+ and in 73 Ge+ implanted Si0.7 Geo0.3 was about 1.6 and 2.6 eV, respectively. The defect density was significantly reduced in 73 Ge+ amorphized Si but not in the 73 Ge+ amorphized Si0.7 Ge0.3. It is proposed that limited Ar solubility inhibits high quality regrowth in both SiGe and Si. Upon 73 Ge+ amorphization and solid phase epitaxy the interfacial strain between the SiGe and Si cannot be accommodated. Thus the epitaxial process is poor in these SiGe strained layers regardless of the amorphizing species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 57
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Tatsumi, T., Hirayama, H., and Aizaki, N., Appl. Phys. Lett. 52, 895 (1988).CrossRefGoogle Scholar
2. Patton, G.L., Iyer, S.S., Delage, S.L., Tiwari, S., and Stork, J.M.C., IEEE Electron Device Lett. 9, 165 (1988).CrossRefGoogle Scholar
3. King, C.A., Hoyt, J.L., Gronet, C.M., Gibbons, J.F., Scott, M.P., and Turner, J., IEEE Electron Device Lett. 10, 52 (1989).CrossRefGoogle Scholar
4. Smith, C. and Jones, M.E., Mater. Res. Soc. Proc. 91, Pittsburgh, PA (1987), pp. 277.Google Scholar
5. Temkin, H., Antreasyan, A., Olsson, N.A., Pearsall, T.P., and Bean, J.C., Appl. Phys. Lett. 49, 809 (1986).CrossRefGoogle Scholar
6. Drosd, B. and Washburn, J., J. Appl. Phys. 51, 4106 (1980).CrossRefGoogle Scholar
7. Csepregi, L., Kennedy, E.F., Mayer, J.W., and Sigmon, T.W., J. Appl. Phys. 49, 3906 (1978).CrossRefGoogle Scholar
8. Cho, K.I., Choo, W.K., Park, S.C., Nishinaga, T., and Lee, B.T., Appl. Phys. Lett. 56, 448 (1990).CrossRefGoogle Scholar
9. Pearton, S.J., Solid State Phenomena 1&2, 247 (1988).Google Scholar
10. Chilton, B.T., Robinson, B.J., Thompson, D.A., Jackman, T.E., and Baribeau, J.M, Appl. Phys. Lett. 54, 42 (1989).CrossRefGoogle Scholar
11. van de Walle, G.F.A., van Ijzendoorn, L.J., van Gorkum, A.A., van den Heuvel, R.A., Theunissen, A.M.L., and Gravesteijn, D.J., Thin Solid Films, 183 183 (1989).CrossRefGoogle Scholar
12. Rajan, K. and Denhoff, M., J. Appl. Phys. 62, 1710 (1987).CrossRefGoogle Scholar
13. Kvam, E.P., Maher, D.M., and Humphreys, C.J., J. Mater. Res. 5, 1900 (1990).CrossRefGoogle Scholar
14. Hull, R., Bean, J.C., Werder, D.J., and Leibenguth, R.E., Appl. Phys. Lett. 52, 1605 (1988).CrossRefGoogle Scholar
15. Ferret, P., Robinson, B.J., Thompson, D.A., and Baribera, J.M., Appl. Phys. Lett. 57. 2220(1990).CrossRefGoogle Scholar
16. Prussin, S., Margolese, D.I., and Tanber, R.N., J. Appl. Phys. 57, 180 (1985).CrossRefGoogle Scholar
17. Jones, K.S. and Venables, D., J. Appl. Phys. 62, 2931 (1991).CrossRefGoogle Scholar
18. Lee, C. and Jones, K.S., in Advanced Composite Materials, edited by Sacks, M.D., Ceram. Trans. 12 (American Ceramic Society, Inc, Westerville, OH, 1991), p. 321.Google Scholar
19. Olson, G.L. and Roth, J.A., Mater. Sci. Reports 3, 1 (1988).CrossRefGoogle Scholar
20. Paine, D.C., Howard, D.J., Stoffel, N.G., and Horton, J.A., J. Mater. Res. 5, 1023 (1990).CrossRefGoogle Scholar
21. Jones, K.S., Prussin, S., and Weber, E.R., Appl. Phys. A 45, 1 (1988).CrossRefGoogle Scholar
22. Miiller, E., Nissen, H.U., Ospelt, M., von Kanel, H., and Stadelmann, P., Thin Solid Films, 181, 165 (1989).CrossRefGoogle Scholar
23. Ourmazd, A. and Bean, J.C., Phys. Resv. B55, 765 (1985).Google Scholar