Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-23T20:19:06.332Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid Phase Crystallization (SPC) Behavior of Amorphous Si Bilayer Films with Different Concentration of Oxygen: Surface vs. Interface-nucleation

Published online by Cambridge University Press:  14 March 2011

Myung-Kwan Ryu ,
Jang-Yeon Kwon  and
Ki-Bum Kim
Myung-Kwan Ryu
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
Jang-Yeon Kwon
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul, KOREA
Get access

Abstract

Solid-phase crystallization (SPC) behavior of a-Si film [a-Si(II)] in which oxygen concentration (CO) is higher at the a-Si/SiO2 interface (CO=5×1021/cm3) than at the film surface (CO=3×1020/cm3) has been investigated. The results were also compared with that of a-Si single layer [a- Si(I), 600 Å] with CO=3×1020/cm3. It has been found that the interface-nucleation was suppressed in the a-Si(II) and the surface-nucleation occurred to make a poly-Si/a-Si (300 Å/300Å) bilayer structure. Many equiaxial grains with sizes of 1∼2 [.proportional]m were formed in the surface- nucleated poly-Si layer. Compared with the results of conventional SPC poly-Si (600 Åthick) in which elliptical grains with sizes of 0.5∼1 [.proportional]m were formed by the interface (a-Si/SiO2)- nucleation, we concluded that the poly-Si/a-Si bilayer scheme is a method to improve the microstructure of SPC poly-Si film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q6.3.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hawkins, W. G., IEEE Trans. Electron Devices 33(4), 477 (1986).Google Scholar
2 Malhi, S. D. S., Shichijo, H., Banerjee, S. K., Sundaresan, R., Elahy, M., Pollack, G. P., Richardson, W. F., Shah, A. H., Hite, L. R., Womack, R. H., Chatterjee, R. K., and Lam, H. W., IEEE Trans. Electron Devices 32(2), 258 (1985).Google Scholar
3. Ryu, M.-K., Hwang, S.-M., Kim, T.-H., Kim, K.-B., and Min, S.-H., Appl. Phys. Lett. 71(21), 3063 (1997).Google Scholar
4. Voutsas, A. T. and Hatalis, M. K., J. Electrochem. Soc. 140(3), 871 (1993).Google Scholar
5. Wu, I.-W., Chiang, A., Fuse, M., Öveçoglu, L., and Huang, T.-Y., J. Appl. Phys. 65(10), 4036 (1989).Google Scholar
6. Nakazawa, K., J. Appl. Phys. 69(3), 1703 (1991).Google Scholar
7. Haji, L., Joubert, P., Stoemenos, J., and Economou, N. A., J. Appl. Phys. 75(8), 3944 (1994).Google Scholar
8. Kim, J.-H., Lee, J.-Y., and Nam, K.-S., J. Appl. Phys. 79(3), 1794 (1996).Google Scholar
9. Noma, T., Yonehara, T., and Kumomi, H., Appl. Phys. Lett. 59(6), 653 (1991).Google Scholar
10. Kennedy, E. F., Csepregi, L., Mayer, J. W., and Sigmon, T. W., J. Appl. Phys. 48(10), 4241 (1977).Google Scholar