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Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise

Published online by Cambridge University Press:  11 February 2011

Necmi Biyikli ,
Orhan Aytur ,
Ibrahim Kimukin ,
Turgut Tut  and
Ekmel Ozbay
Necmi Biyikli
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent Ankara 06533, TURKEY
Orhan Aytur
Affiliation:
Department of Electrical and Electronics Engineering, Bilkent University, Bilkent Ankara 06533, TURKEY
Ibrahim Kimukin
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
Turgut Tut
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
Ekmel Ozbay
Affiliation:
Department of Physics, Bilkent University, Bilkent Ankara 06533, TURKEY
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Abstract

We report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity and low noise. The devices were fabricated on n-/n+ AlGaN/GaN hetero-structures using a microwave compatible fabrication process. Using Al0.38Ga0.62N absorption layer, true solar-blind operation with a cutoff wavelength of ∼274 nm was achieved. The solar-blind detectors exhibited < 400 fA dark current in the 0–25 V reverse bias regime, and a maximum responsivity of 89 mA/W around 267 nm. The photovoltaic detectivity of the devices were in excess of 2.6×1012 cmHz1/2/W, and the detector noise was 1/f limited with a noise power density less than 3×10−29 A2/Hz at 10 KHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L7.11
Copyright
Copyright © Materials Research Society 2003

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References

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