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Solar Cells Based on PVD Grown CuGaSe2 – Absorber and Device Properties

Published online by Cambridge University Press:  21 March 2011

S. Schuler ,
S. Nishiwaki ,
M. Dziedzina ,
R. Klenk ,
S. Siebentritt  and
M.Ch. Lux-Steiner
S. Schuler
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
S. Nishiwaki
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
M. Dziedzina
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
R. Klenk
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
S. Siebentritt
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
M.Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut Berlin, Glienickerstr. 100, 14109 Berlin, Germany
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Abstract

For solar cells based on CuGaSe2(CGS) absorber layers physical vapour deposition (PVD) was employed to deposit polycrystalline CGS thin films. Efficiencies up to 7.9% were achieved by applying a two-stage deposition process for absorber preparation. The high structural quality of the absorbers is shown. For highest cell efficiencies our standard recipe for the CdS buffer deposition had to be re-adapted. Voltage dependent spectral response measurements of the device in conjunction with absorption measurements of the absorber layers allow calculation of the minority carrier diffusion length, space charge region (SCR) width, absorber carrier concentration and the built-in voltage. The defect state density at the buffer/absorber interface is estimated. It can be shown that the benefical effect of the modified buffer deposition is mainly due to a reduced acceptor concentration at the absorber/buffer interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.14
Copyright
Copyright © Materials Research Society 2001

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References

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