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SOI Structures Formed Using Line-Source Electron Beam Recrystallization

Published online by Cambridge University Press:  28 February 2011

Cameron A. Moore ,
Jack D. Meyer ,
Jay T. Fukumoto ,
Nicholas J. Szluk ,
Lance R. Thompson ,
James A. Knapp ,
George J. Collins  and
Samuel Berkman
Cameron A. Moore
Affiliation:
Applied Electron Corporation, Albuquerque, New Mexico, 87113.
Jack D. Meyer
Affiliation:
Applied Electron Corporation, Albuquerque, New Mexico, 87113.
Jay T. Fukumoto
Affiliation:
Applied Electron Corporation, Albuquerque, New Mexico, 87113.
Nicholas J. Szluk
Affiliation:
Applied Electron Corporation, Albuquerque, New Mexico, 87113.
Lance R. Thompson
Affiliation:
Colorado State University, Department of Electrical Engineering, Fort Collins, Colorado, 80523.
James A. Knapp
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico, 87185.
George J. Collins
Affiliation:
Colorado State University, Department of Electrical Engineering, Fort Collins, Colorado, 80523.
Samuel Berkman
Affiliation:
David Sarnoff Research Center, Princeton, New Jersey, 08543.
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Abstract

Recrystallization of silicon-on-insulator (SOI) films using a line-source electron beam is described. This unique heat source can continuously emit several kilowatts of - 5 keV electrons into a beam 150 mm in length and - 2.5 mm in width, an exposure area which allows processing of 100 mm substrates in a single pass. An attractive aspect of this beam is the ability to control the beam profile, which in turn allows one to influence the thermal gradients present during recrystallization. Using a tightly focussed beam to recrystallize the SOI layer results in a film whose physical properties are generally attributed to films grown with a high thermal gradient at the solidifying liquid-solid interface (highly branched subboundaries with a maximum spacing of - 20 microns and several degrees of angular mismatch.) By reducing the gradient at the growth interface it is possible to achieve unbranched sub-boundaries with over 70 micron spacing and less than 0.5 degrees of out-of-plane tilt misalignment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 207
Copyright
Copyright © Materials Research Society 1988

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