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Soft Lithography Fabrication of Fully Flexible and Transparent all Organic FETs for Large Area Applications

Published online by Cambridge University Press:  26 February 2011

Piero Cosseddu ,
Emanuele Orgiu  and
Annalisa Bonfiglio
Piero Cosseddu
Affiliation:
piero.cosseddu@diee.unica.it, University of Cagliari, Department of Electrical and Electronic Engineering, Piazza d'Armi, 09123 Cagliari, Italy, Cagliari, 09123, Italy, +39 0706755769, +39 0706755782
Emanuele Orgiu
Affiliation:
emanuele.orgiu@diee.unica.it, University of Cagliari, Department of Electrical and Electronic Engineering, Piazza d'Armi, Cagliari, 09123, Italy
Annalisa Bonfiglio
Affiliation:
annalisa@diee.unica.it, University of Cagliari, Department of Electrical and Electronic Engineering, Piazza d'Armi, Cagliari, 09123, Italy
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Abstract

Fully flexible and transparent all organic field effect transistors were fabricated by means of an innovative and inexpensive technique. A 1.8μm thick polyethylenetetherephtalate sheet, Mylar® (Du Pont), was used as gate dielectric and at the same time as mechanical support for the whole structure. We used pentacene, deposited by thermal sublimation, as semiconducting layer, whereas poly(ethylene-dioxythiophene)/polystyrene sulfonate (PEDOT/PSS) was used for the realization of the electrodes. Gate electrodes were realized by spin coating, while source and drain electrodes were patterned by micro-contact printing. We fabricated typical p-type field effect transistors, with mobilities up to 2 × 10−1cm2/Vs and Ion/Ioff up to 105, in a very simple and inexpensive way. It is worth to note that this technique allows the realization of bottom contact and top contact transistors. We realized both bottom contact and top contact devices on the same substrate and with the same active layer and we investigated how the structure itself and the active layer morphology influence the electrical properties in terms of hole mobility, Series Contact Resistance and parasitic capacitance effects. The comparison between top-contact and bottom-contact devices shows interesting marked differences that can be mainly attributed to a different PEDOT:PSS/semiconductor interface quality, influencing the most meaningful parameters. The flexibility of the obtained structure and the easy scalability of the technological process, suitable for roll to roll mass production processes, open the way for economic production of high-resolution organic devices

Keywords

polymerorganicthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 965: Symposium S – Organic Electronics – Materials, Devices and Applications , 2006 , 0965-S07-02
Copyright
Copyright © Materials Research Society 2007

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References

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