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Smart-Cut® Technology: an Industrial Application of Ion Implantation Induced Cavities

Published online by Cambridge University Press:  10 February 2011

B. Aspar ,
C. Lagahe ,
H. Moriceau ,
A. Soubie ,
M. Bruel ,
A.J. Auberton-Hervé ,
T. Barge  and
C. Maleville
B. Aspar
Affiliation:
LETI/CEA - Département Microtechnologies - CEA Grenoble 17 avenue des Martyrs - 38054 Grenoble Cédex, France
C. Lagahe
Affiliation:
LETI/CEA - Département Microtechnologies - CEA Grenoble 17 avenue des Martyrs - 38054 Grenoble Cédex, France
H. Moriceau
Affiliation:
LETI/CEA - Département Microtechnologies - CEA Grenoble 17 avenue des Martyrs - 38054 Grenoble Cédex, France
A. Soubie
Affiliation:
LETI/CEA - Département Microtechnologies - CEA Grenoble 17 avenue des Martyrs - 38054 Grenoble Cédex, France
M. Bruel
Affiliation:
LETI/CEA - Département Microtechnologies - CEA Grenoble 17 avenue des Martyrs - 38054 Grenoble Cédex, France
A.J. Auberton-Hervé
Affiliation:
SOITEC SA, 1 Place Firmin Gautier 38000 Grenoble, France
T. Barge
Affiliation:
SOITEC SA, 1 Place Firmin Gautier 38000 Grenoble, France
C. Maleville
Affiliation:
SOITEC SA, 1 Place Firmin Gautier 38000 Grenoble, France
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Abstract

The Smart-Cut® process is based on proton implantation and wafer bonding. Proton implantation enables delamination of a thin layer from a thick substrate to be achieved whereas the wafer bonding technique enables different multilayer structures to be achieved by transferring the delaminated layer onto a second substrate. One of the best known applications of Smart Cut® is the Silicon On Insulator structure. The physical mechanisms involved in the delamination process are discussed based on the study of Proton-induced microcavity formation during implantation and growth during annealing. The experimental results on the time and temperature required to achieve delamination lead to different activation energies depending on the implantation conditions and resistivity of the substrate. All the experiments indicate that growth of microcavities is mainly controlled by hydrogen diffusion. The growth of these microcavities and the pressure inside them induce delamination when the catastrophic radius of the microcavities is reached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 381
Copyright
Copyright © Materials Research Society 1998

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