Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-16T17:00:18.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Slant-Scanning and Interstice-Bridging Applied to ZMR to Improve the Quality of Recrystallized Si Films on Quartz

Published online by Cambridge University Press:  28 February 2011

Hisashi Tomita ,
Shigeru Kojima  and
Setsuo Usui
Hisashi Tomita
Affiliation:
Sony Corporation Research Center 174 Fujitsukacho, Hodogayaku, Yokohama Japan
Shigeru Kojima
Affiliation:
Sony Corporation Research Center 174 Fujitsukacho, Hodogayaku, Yokohama Japan
Setsuo Usui
Affiliation:
Sony Corporation Research Center 174 Fujitsukacho, Hodogayaku, Yokohama Japan
Get access

Abstract

CMOS test circuit chips have been fabricated for the purpose of evaluating Si film recrystallized on quartz wafers by using a graphite-strip heater oven equipped with a micro-computer feedback system. Two new methods have been applied to the zone-melting recrystallization technique to produce a highly uniform and grain boundary (GB) free recrystallized Si film. The slant-scanning method was used to control the GB's location in recrystallized Si film of 180μm wide stripes separated by 20μm. The intersticebridging method was used to reduce the (111) texture generation to less than 1%. The average electron mobility and the average threshold voltage for MOSFET's were 960cm2/V sec, with a standard deviation of 43cm2/V sec, and 1.38V with a standard deviation of 0.25V, respectively. For the ring oscillator, at a supply voltage of 12V, the propagation delay time was 1.7nsec per stage. The maximum response frequency was higher than IMHz for the CMOS inverters.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 125
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Geis, M.W., Smith, H.I., Tsaur, B-Y., Fan, J.C.C., Maby, E.W. and Antoniadis, D.A., Appl. Phys. Lett., 40, 158, (1982)CrossRefGoogle Scholar
2 Gels, M.W., Smith, H.I., Tsaur, B-Y., Fan, J.C.C., Silversmith, D.J. and Mountain, R.W., J. Electrochem. Soc., 129, 2812, (1982)Google Scholar
3 Nishimura, T., Ishizu, A., Matsumoto, T. and Akasaka, Y., Proc. Mat. Res. Soc. 33, 221, (1984)CrossRefGoogle Scholar
4 Hawkins, W.G., Drake, P.J., Goodman, N.B. and Hartman, P.J., Proc. Mat. Res. Soc. 33, 231, (1984)CrossRefGoogle Scholar
5 Chiang, A. and Johnson, N.M., Proc. Mat. Res. Soc. 53 (to be published in June 1986)Google Scholar
6 Johnson, N.M. Biegelsen, D.K. and Moyer, M.D., Proc. Mat. Res. Soc. 1, 463, (1981)CrossRefGoogle Scholar
7 Chen, C.K., West, K.W., Pfeiffer, L., Gels, M.W., Darak, S. and Tsaur, B-Y., Proc. Mat. Res. Soc. 53 (to be published in June 1986)Google Scholar
8 Tsaur, B-Y., Fan, J.C.C. and Geis, M.W., Appl. phys. Lett. 40, 322, (1982)CrossRefGoogle Scholar