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Size Effects in Sputtered PZT Thin Films

Published online by Cambridge University Press:  16 February 2011

Seshu B. Desu ,
Chien H. Peng ,
Lee Kammerdiner  and
Paul J. Schuele
Seshu B. Desu
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
Chien H. Peng
Affiliation:
Department of Materials Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
Lee Kammerdiner
Affiliation:
Ramtron Corporation, Colorado Springs, CO 80918
Paul J. Schuele
Affiliation:
Ramtron Corporation, Colorado Springs, CO 80918
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Abstract

The ferroelectric properties and switching characteristics of rf sputtered PZT thin films were investigated as a function of film thickness (30–300 nm) and grain size. Electron microscopy was used to characterize the film microstructure. The film thickness was measured by ellipsometer. The results were analyzed for the individual contributions of film thickness and crystallite dimension to the size effects on the properties of ferroelectric thin films. A critical discussion of several different models describing the size effects was also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 319
Copyright
Copyright © Materials Research Society 1990

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References

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