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Six C1-x Electroluminescence Structures

Published online by Cambridge University Press:  26 February 2011

C. Falcony ,
A. Ortiz  and
A. Sanchez
C. Falcony
Affiliation:
Centro de Investigaciones y Estudios Avanzados del I.P.N., Depto. de Fisica, Apdo. Postal 14-740, 07000, Mexico, D.F
A. Ortiz
Affiliation:
Instituto de Investigaciones en Materiales, UNAM., Apdo. Postal 70-360, Coyoac´n 04510, México, D.F
A. Sanchez
Affiliation:
Instituto de Investigaciones en Materiales, UNAM., Apdo. Postal 70-360, Coyoac´n 04510, México, D.F
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Abstract

The electroluminescent characteristics of multilayer structures involving Si C as the light emitting material are reported. The structures studieA have two types of multilayer stacks a) Si rich Si02/ Si02/- Six Cl v and b) Si rich SiO2 /Six C1-x, Both type of structures were deposite on an n-type silicon surstrt-e and conductive indium oxide was deposited on top of the structure to define the electroluminescent device. The light emitted spectra present two broad peaks at ∼530 and 670nm when an undoped Si C layer is integrated in the structure. However, when a boron dopedX SixC1-x is used, the light emission at larger wavelengths is dominant.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 435
Copyright
Copyright © Materials Research Society 1988

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References

Refrences

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