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Si/SiO2 Interface Studies by Immersion Ellipsometry

Published online by Cambridge University Press:  21 February 2011

Q. Liu  and
Ea. Irene
Q. Liu
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, N. C. 27599-3290
Ea. Irene
Affiliation:
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, N. C. 27599-3290
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Abstract

The mechanisms associated with Si/SiO2 interface annealing and thermal oxidation conditions were studied by spectroscopic immersion ellipsometry. Essentially, this surface sensitive ellipsometry technique uses liquids that match the refractive index of the films, thereby optically removing the films.

With the use of an optical model, it is shown that at high annealing temperatures viscous relaxation dominates, while at low annealing temperatures the suboxide reduction is apparent. It is also shown that with the thickening SiO2 overlayer, the thickness of the suboxide layer at the interface increases and the average radius of the crystalline silicon protrusions decreases for the three different orientation studied. These results are consistent with the commonly accepted Si oxidation model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 405
Copyright
Copyright © Materials Research Society 1993

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References

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