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Si/SiGe and III-V Integrated Circuit Technology for Next Generation High-Speed Systems: Comparisons and Tradeoffs

Published online by Cambridge University Press:  10 February 2011

Lawrence E. Larson
Lawrence E. Larson*
Affiliation:
Department of Electrical and Computer Engineering, University of California - San Diego, 9500 Gilman Drive, La Jolla, CA 92093, e-mail:, larson@ece.ucsd.edu
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Abstract

This paper will summarize the technology tradeoffs that are involved in the implementation of high-speed integrated circuit technology for communications applications. The advantages of Si/SiGe and III-V technology with respect to CMOS and Si bipolar technologies are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 257
Copyright
Copyright © Materials Research Society 1999

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References

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