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Single-Shot Excimer-Laser Crystallization of an Ultra-Large Si Thin-Film Disk

Published online by Cambridge University Press:  14 March 2011

Mitsuru Nakata ,
Chang-Ho Oh  and
Masakiyo Matsumura
Mitsuru Nakata
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
Chang-Ho Oh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail : nakata@silicon.pe.titech.ac.jp URL : http://silicon.pe.titech.ac.jp/
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Abstract

An excimer-laser-induced large-grain growth method has been proposed which utilizes non-uniform heat diffusion along the Si thin-film and also along the underlayer. A single-shot of KrF excimer-laser light pulse with uniform intensity could crystallize a circularly pre-patterned Si thin-film of 20νm in diameter, much larger than TFT feature size in present AM-LCD panels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 621: Symposia Q/R – Electron-Emissive Materials, Vacuum Microelectronics… , 2000 , Q7.3.1
Copyright
Copyright © Materials Research Society 2000

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References

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