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Single-Crystalline Films of Piezo- and Ferroelectrics on Oxidized Silicon by Artificial Epitaxy

Published online by Cambridge University Press:  25 February 2011

E.I. Givargizov ,
LA. Zadorozhnaya  and
A.I. Pankrashov
E.I. Givargizov
Affiliation:
Institute of Crystallography, USSR Academy of Sciences, Leninsky pr. 59, Moscow 117333, USSR
LA. Zadorozhnaya
Affiliation:
Institute of Crystallography, USSR Academy of Sciences, Leninsky pr. 59, Moscow 117333, USSR
A.I. Pankrashov
Affiliation:
Institute of Crystallography, USSR Academy of Sciences, Leninsky pr. 59, Moscow 117333, USSR
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Abstract

Artificial epitaxy (or graphoepitaxy) is considered as an alternative to classic (“atomic”) heteroepitaxy, being especially suitable for the preparation of single-crystalline films of some materials on strongly-dissimilar substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 123
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Givargizov, E. I., Oriented Crystallization on Amorphous Substrates (Plenum Press, New York, 1991).CrossRefGoogle Scholar
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5. Sheftal, N. N. in Growth of Crystals, edited by Sheftal, N. N. (Consultants Bureau, New York, 1976), pp. 185–210.Google Scholar
6. Givargizov, E. I., Kliya, M. O., Melin-Adamyan, V. R., Greblanno, A-I., DeMattei, R., Feigelson, R. S., to be published in J. Crystal Growth.Google Scholar