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Simulation of Metallization Formation Processes on Si

Published online by Cambridge University Press:  25 February 2011

V. V. Tokarev ,
A. N. Likholet  and
B. N. Zon
V. V. Tokarev
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P.Brovka 17, Minsk 220726, USSR
A. N. Likholet
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P.Brovka 17, Minsk 220726, USSR
B. N. Zon
Affiliation:
Institute of Solid State and Semiconductor Physics, the BSSR Academy of Sciences, P.Brovka 17, Minsk 220726, USSR
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Extract

The processes occuring in thin films, in particular such as silicide formation processes, are rather difficult to control using analytical measurements. Such processes are widely used for the formation of metallization layers and usually require the precise control of film thickness, atomic composition, atomic distribution profiles, phase composition and electric resistance 1. The absence of model concepts of the process of silicide formation hinders the wide use of such processes and makes them labour-consuming ones due to the large number of control measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 151
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1]. Tu, K.N. and Mayer, J.W., in Thin Films - Interdiffusion and Reactions, edited by Poate, J.M., Tu, K.N. and Mayer, J.W. (John Wiley and Sons, 1978).Google Scholar
[2] Nanai, L., Hevesi, I., Bunkin, N.F., Zon, B.A., Lavrishev, S.V., Lukyanchuk, B.S. and Shafeev, G.A., Appl. Phys. A 50, 27, (1990).CrossRefGoogle Scholar
[3] Mikhlin, S.G., in Variatzionnye Metody v Matematicheskoj Fisike, 2nd ed. (Nauka, Moscow, 1970).Google Scholar