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Simulation of Dry Etching Processes for III-V Compounds Technology Applications

Published online by Cambridge University Press:  22 February 2011

K. Ketata ,
S. Koumetz ,
M. Ketata  and
R. Debrie
K. Ketata
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, 76131 Mont Saint Aignan, France
S. Koumetz
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, 76131 Mont Saint Aignan, France
M. Ketata
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, 76131 Mont Saint Aignan, France
R. Debrie
Affiliation:
LCIA-INSA de Rouen, Place Emile Blondel, 76131 Mont Saint Aignan, France
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Abstract

This work introduces a new dry etching simulation technique of the sputtering component of Reactive Ion Etching (R.I.E.) and presents experimental verifications for GaAs. The final objective is to correlate the etch rate to the plasma reactor parameters, which can be incorporated into a computer-simulation program.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 471
Copyright
Copyright © Materials Research Society 1994

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References

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