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Silicon Surface Metal Contamination Measurements using Grazing-Emission XRF Spectrometry

Published online by Cambridge University Press:  10 February 2011

S. De Gendt
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
K. Kenis
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. Baeyens
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
P. W. Mertens
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
M. M. Heyns
Affiliation:
IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium
G. Wiener
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
S. J. Kidd
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
D. M. Knotter
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
P. K. De Bokx
Affiliation:
Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
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Abstract

Grazing-Emission X-Ray Fluorescence Spectrometry (GEXRF) is a new analytical X-ray fluorescence technique, which like TXRF takes advantage of the total-reflection phenomenon. The main advantage of GEXRF over TXRF is its sensitivity towards light elements. This paper presents straight GEXRF and VPD-DC-GEXRF analysis results for Na, Mg, Al, K and Ca surface contamination on silicon wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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