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Silicon Recrystallization in Sipos Material Obtained by Disilane

Published online by Cambridge University Press:  15 February 2011

J. J. Pedroviejo ,
B. Garrido ,
J. C. Ferrer ,
A. Cornet ,
E. Scheid  and
J. R. Morante
J. J. Pedroviejo
Affiliation:
E.M.E, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain
B. Garrido
Affiliation:
E.M.E, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain
J. C. Ferrer
Affiliation:
E.M.E, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain
A. Cornet
Affiliation:
E.M.E, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain
E. Scheid
Affiliation:
L.A.A.S-C.N.R.S, 7 Av. du Colonel Roche, F-31077 Toulouse-Cédex, France
J. R. Morante
Affiliation:
E.M.E, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, Av.Diagonal 647, E-08028 Barcelona, Spain
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Abstract

Conventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 351
Copyright
Copyright © Materials Research Society 1996

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