Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-05-01T03:55:18.443Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon (Oxy)Nitride Thin Films Deposited by Lpcvd From SiCl2H2-NH3-N2O Mixtures Of Variable Composition

Published online by Cambridge University Press:  10 February 2011

D. Davazoglou  and
A. A. Iliadis
D. Davazoglou
Affiliation:
NCSR “Demokritos”, Institute of Microelectronics, POB 60228, 153 10 Agia Parskevi Attiki, Greece.
A. A. Iliadis
Affiliation:
Electrical Engineering Department, University of Maryland, College Park, MD 20742 USA.
Get access

Abstract

Silicon (oxy)nitride thin films were deposited on (100) 4″ silicon substrates in a conventional LPCVD reactor at 812°C and 230 mTorr, using mixtures of SiCl2H2 -NH3-N2O of variable composition in order to evaluate their optical properties for potential applications in SOI based Si technology. The depositions were carried out keeping the flow of SiCl2H2 and NH3 constant at 20 and 60 sccm respectively while that of N2O was varying between 0 and 180 sccm. Optical reflection measurements within the range 190 to 860 nm, performed on our films were analyzed within the Forouhi-Bloomer model (Phys. Rev. B34, 7018 (1986)) for amorphous semiconductors. From the analysis of the optical spectra, the constants of the model were derived. It was shown that the refractive index of the films varies between the limits set by those of silicon nitride and silicon dioxide, the increase of the N2O flow implying a decrease of the refractive index of the films. The film thicknesses were also derived from the analysis of the optical spectra. Capacitance - voltage measurements made on Metal-Insulator-Semiconductor (MIS) structures using our films as the insulator, have shown that, the electric charge density within the dielectric initially increases and then decreases with increasing the amount of oxygen into the deposition ambiance. Our films are suitable for optoelectronic applications in SOI structures compatible with C-MOS technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 187
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Adams, A.C. in VLSI Technology Second Edition, S.M. Sze Editor, McGraw-Hill (1988).Google Scholar
2. Pal, P.B. in Progress in Optics Vol XXXII p. 1, E. Wolf Editor, Elsevier (1993).Google Scholar
3. Chouteau, S., Boussey, J., Cabon, B., and Iliadis, A.A., Proceedings of 1995 IEEE Intern. SOI Conf., Tucson, AZ, pp. 40, 1995.Google Scholar
4. Kuiper, A.E.T., Koo, S.W., Kuiper, F.H.P.M. and Tamminga, Y., J. Vac. Sci. Technol. B1, 62 (1983).Google Scholar
5. Forouhi, A.R. and Bloomer, I., Phys. Rev. B34, 7018 (1986).Google Scholar
6. James, F., Function Minimization, Proc. of the 1972 CERN Computing and Data Processing School, Pertisau, Austria, Sept. 1972.Google Scholar
7. Aspnes, D.E. in Properties of Silicon, INSPEC The Institute of Electrical Engineers, EMIS Data review RN#17807 (1988).Google Scholar
8. Malitson, I.J., J. Opt. Soc. of America, 55, 1205 (1965).Google Scholar
9. Petalas, J. and Logothetidis, S., Phys. Rev. B 50, 11801 (1994).Google Scholar
10. Philipp, H.R. in Properties of Silicon, INSPEC The Inst. of Electrical Engineers, EMIS Data Review, RN#16135, (1988).Google Scholar
11. Theeten, J.B., Aspnes, D.E., Simonet, F., Erman, M. and Murau, P.C., J. Appl. Phys. 52, 6788 (1981).Google Scholar
12. Pan, P. and Berry, W., J. Electrochem. Soc. 132, 3001 (1985).Google Scholar
13. Philipp, H.R., J. Electrochem. Soc., 120 295 (1973).Google Scholar
14. Sze, S. M. in Physics of Semiconductor Devices, Second Edition, J. Wiley and Sons, Inc., (1981).Google Scholar
15. Snyder, P.G., Xiong, Y.M., Woolam, J.A., Al-Jumaily, G.A. and Gagliardi, F.J., J. Vac. Sci. Technol. A10, 1462 (1992).Google Scholar
16. Trolier-McKinstry, S., Hu, H. and Carim, A.H., J. Electrochem. Soc., 141 2483 (1994).Google Scholar
17. Xiong, Y. M., Snyder, P.G., Woolam, J. and Krosche, E.R., J. Vac. Sci., Technol. A10, 950 (1992).Google Scholar
18. Aspnes, D.E. and Theeten, J.B., J. Appl. Phys. 50, 4928 (1979).Google Scholar