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Silicon Oxidation by Rapid Thermal Processing (RTP)

Published online by Cambridge University Press:  26 February 2011

A. M. Hodge ,
C. Pickering ,
A. J. Pidduck  and
R. W. Hardeman
A. M. Hodge
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
C. Pickering
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
A. J. Pidduck
Affiliation:
Royal Signals and Radar Establishment, St. Andrews Road, Malvern, Worcs, WR14 3PS, UK
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Abstract

Single crystal silicon wafers have been oxidised by exposure to an oxygen ambient at atmospheric pressure during RTP using an A G Associates Heatpulse 2101 Rapid Thermal Annealer. Wafers of the standard orientations used in silicon device processing <100>, <111> and <110> were studied. Oxidation was carried out in the temperature range 900 to 1250°C for times of RTP from 4 to 25U seconds producing oxides up to 60nm in thickness. Oxidation rates and their orientation and temperature dependence were derived from ellipsometric measurements of oxide thickness. X-ray photoelectron spectroscopy (XPS) and infra-red absorption spectrophotometry were also employed in the oxide characterisation. Preliminary electrical characterisation of the oxides, investigated using MOS C-V analyses, showed that the interface state densities were comparable to those in conventional furnace grown oxides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 313
Copyright
Copyright © Materials Research Society 1986

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References

1. Nicollian, E.H. and Brews, J.R., MOS Physics and Technology (Wiley,1982).Google Scholar
2. Kamigaki, Y. and Itoh, Y., J. Appl. Phys. 48, (7), 2891 (1977).Google Scholar
3. Van der Meulen, Y.J., J. Electrochem. Soc. 119, (4), 530 (1972).Google Scholar
4. Nulman, J., Krusius, J. P. and Gat, A., IEEE Electron Device Lett. EDL6, (5), 205 (1985).CrossRefGoogle Scholar
5. Gat, A. and Nulman, J., Semiconductor International p120 May 1985.Google Scholar
6. Hodge, A. M., Chew, N. G. and Cullis, A. G., MRS Europe Conference Proceedings, 683 (1984).Google Scholar
7. Kern, W., Semiconductor International p94 April 1984.Google Scholar
8. Ceresa, E. Mello and Garbassi, F., Materials Chemistry and Physics, 9, 371 (1983).CrossRefGoogle Scholar
9. Pearson, P.J., Greef, R., Pickering, C., Hardeman, R.W. and Hodge, A.M., To be published.Google Scholar
10. Sze, S.M., VLSI Technology, (McGraw-Hill, 1983).Google Scholar
11. Ishizaka, A., Iwata, S. and Kamigaki, Y., Surface Sci., 84, 355 (1979).Google Scholar
12. Irene, E.A., Massoud, H., Tierney, E. and Plummer, J., 1982 Semiconductor Interface Specialists Conference, San Diego, California (reference in [14]).Google Scholar
13. Massoud, H., Irene, E.A. and Plummer, J., 1981 Semiconductor Interface Specialists Conference, New Orleans, San Diego (reference in [14]).Google Scholar
14. Irene, E.A., Semiconductor International p99 April 1983.Google Scholar
15. Ng, K. K, Polito, W. J. and Ligenza, J. R., Appl. Phys. Lett. 44, (6) 626 (1984)Google Scholar