Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-20T01:12:12.086Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas

Published online by Cambridge University Press:  01 February 2011

X. Y. Chen ,
Y.F. Lu ,
Y. H. Wu ,
B.J. Cho  and
H. Hu Laser
X. Y. Chen
Affiliation:
Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
Y.F. Lu
Affiliation:
Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
Y. H. Wu
Affiliation:
Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
B.J. Cho
Affiliation:
Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
H. Hu Laser
Affiliation:
Microprocessing Laboratory and Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore119260
Get access

Abstract

We reported Si nanostructured films formed by pulsed-laser deposition (PLD) in both inert Ar gas and reactive O2 gas. The as-deposited nanostructured films with visible photoluminescence (PL) show a transition from a film structure to a porous cauliflowerlike structure, as the ambient gas pressure increases from 1 mTorr to 1 Torr. The film consists of small crystals with size from 1 to 20 nm. The oxygen composition of SiOx increases with increasing O2 gas pressure, while Si 2p peak of the Si dioxide also becomes dominate. At 100 mTorr O2 gas, almost complete SiO2 structure is formed. The PL at 1.8–2.1 eV is attributed to the quantum confinement effect (QCE) in Si nanocrystal core, while the PL band at 2.55 eV can be explained by the light emission from the localized surface states at SiOx/Si interface. Laser annealing was applied to the as-deposited nanostructured films. The PL intensities are increased by about two to three times of magnitude after annealing. High laser fluence causes damages in the films and optimal laser fluence exists before film damages or laser ablation occur.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A19.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Furukawa, S. and Miyasato, T., Jpn. J. Appl. Phys. 27, L2207 (1988).Google Scholar
2. Takagi, H., Ogawa, H., Yamazaki, Y., Ishizaki, A., and Nakagiri, T., Appl. Phys. Lett. 56, 2379 (1990).Google Scholar
3. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
4. Makino, T., Yamada, Y., Suzuki, N., and Yoshida, T., J. Appl. Phys. 90, 5075 (2001).Google Scholar
5. Chen, L. Y., in Pulsed Laser Deposition of Thin Films, edited by Chrisey, D. B. and Hubler, G. K. (John Wiley & Sons, New York, 1994), p. 186.Google Scholar
6. Bell, F. G. and Ley, L., Phys. Rev. B 37, 8383 (1988).Google Scholar
7. Delerue, C., Allan, G., and Lannoo, M., Phys. Rev. B 48, 11024 (1993).Google Scholar
8. Ledoux, G., Guillois, O., Porterat, D., Reynaud, C., Huisken, F., Kohn, B., and Paillard, V., Phys. Rev. B 62, 15942 (2000).Google Scholar
9. Kimuraand, K. Iwasaki, S., Jpn. J. Appl. Phys. 38, 609 (1999).Google Scholar